Memory array isolation structures

ABSTRACT

A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor includes a memory film contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed between the OS layer and the word line; and a dielectric material separating the source line and the bit line. The dielectric material forms an interface with the OS layer. The dielectric material comprises hydrogen, and a hydrogen concentration at the interface between the dielectric material and the OS layer is no more than 3 atomic percent (at %).

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.63/045,992, filed on Jun. 30, 2020, which application is herebyincorporated herein by reference.

BACKGROUND

Semiconductor memories are used in integrated circuits for electronicapplications, including radios, televisions, cell phones, and personalcomputing devices, as examples. Semiconductor memories include two majorcategories. One is volatile memories; the other is non-volatilememories. Volatile memories include random access memory (RAM), whichcan be further divided into two sub-categories, static random accessmemory (SRAM) and dynamic random access memory (DRAM). Both SRAM andDRAM are volatile because they will lose the information they store whenthey are not powered.

On the other hand, non-volatile memories can keep data stored on them.One type of non-volatile semiconductor memory is Ferroelectric randomaccess memory (FeRAM, or FRAM). Advantages of FeRAM include its fastwrite/read speed and small size.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A, 1B, and 1C illustrate a perspective view, a circuit diagram,and a top down view of a memory array in accordance with someembodiments.

FIGS. 2, 3A, 3B, 4, 5, 6, 7, 8, 9, 10, 11, 12A, 12B, 13, 14, 15, 16,17A, 17B, 18A, 18B, 19A, 19B, 20, 21, 22A, 22B, 23A, 23B, 23C, 24A, 24B,24C, 25A, 25B, 25C, 26A, 26B, 26C, 27A, 27B, 27C, 28A, 28B, 28C, and 28Dillustrate varying views of manufacturing a memory array in accordancewith some embodiments.

FIGS. 29, 30, and 31 illustrate varying views of a memory array inaccordance with some embodiments.

FIGS. 32A and 32B illustrate characteristics of a device in accordancewith some embodiments.

FIGS. 33A, 33B, 33C, and 33D illustrates illustrate a memory array inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Various embodiments provide a 3D memory array with a plurality ofvertically stacked memory cells. Each memory cell includes thin filmtransistor (TFT) having a word line region acting as a gate electrode, abit line region acting as a first source/drain electrode, and a sourceline region acting as a second source/drain electrode. Each TFT furtherincludes an insulating memory film (e.g., as a gate dielectric) and anoxide semiconductor (OS) channel region.

FIGS. 1A, 1B, and 1C illustrate examples of a memory array according tosome embodiments. FIG. 1A illustrates an example of a portion of thememory array 200 in a three-dimensional view; FIG. 1B illustrates acircuit diagram of the memory array 200; and FIG. 1C illustrates a topdown view of the memory array 200 in accordance with some embodiments.The memory array 200 includes a plurality of memory cells 202, which maybe arranged in a grid of rows and columns. The memory cells 202 mayfurther stacked vertically to provide a three dimensional memory array,thereby increasing device density. The memory array 200 may be disposedin the back end of line (BEOL) of a semiconductor die. For example, thememory array may be disposed in the interconnect layers of thesemiconductor die, such as, above one or more active devices (e.g.,transistors) formed on a semiconductor substrate.

In some embodiments, the memory array 200 is a flash memory array, suchas a NOR flash memory array, or the like. Each memory cell 202 mayinclude a thin film transistor (TFT) 204 with an insulating, memory film90 as a gate dielectric. In some embodiments, a gate of each TFT 204 iselectrically coupled to a respective word line (e.g., conductive line72), a first source/drain region of each TFT 204 is electrically coupledto a respective bit line (e.g., conductive line 106), and a secondsource/drain region of each TFT 204 is electrically coupled to arespective source line (e.g., conductive line 108), which electricallycouples the second source/drain region to ground. The memory cells 202in a same horizontal row of the memory array 200 may share a common wordline while the memory cells 202 in a same vertical column of the memoryarray 200 may share a common source line and a common bit line.

The memory array 200 includes a plurality of vertically stackedconductive lines 72 (e.g., word lines) with dielectric layers 52disposed between adjacent ones of the conductive lines 72. Theconductive lines 72 extend in a direction parallel to a major surface ofan underlying substrate (not explicitly illustrated in FIGS. 1A and 1B).The conductive lines 72 may have a staircase configuration such thatlower conductive lines 72 are longer than and extend laterally pastendpoints of upper conductive lines 72. For example, in FIG. 1A,multiple, stacked layers of conductive lines 72 are illustrated withtopmost conductive lines 72 being the shortest and bottommost conductivelines 72 being the longest. Respective lengths of the conductive lines72 may increase in a direction towards the underlying substrate. In thismanner, a portion of each of the conductive lines 72 may be accessiblefrom above the memory array 200, and conductive contacts may be made toan exposed portion of each of the conductive lines 72.

The memory array 200 further includes a plurality of conductive lines106 (e.g., bit lines) and conductive lines 108 (e.g., source lines). Theconductive lines 106 and 108 may each extend in a directionperpendicular to the conductive lines 72. A dielectric material 98 isdisposed between and isolates adjacent ones of the conductive lines 106and the conductive lines 108. In some embodiments, at least a portion ofthe dielectric material 98 is a low-hydrogen material formed using ahydrogen-comprising precursor that is introduced at a reduced flowrate.For example, at least portions of the dielectric material 98 (e.g.,dielectric material 98A) in physical contact with an oxide semiconductor(OS) layer 92 (described below) may have a relatively low hydrogenconcentration, such as, a less than 3 atomic percent (at %). The lowhydrogen concentration (e.g., in the above range) may reduce hydrogendiffusion into the OS layer 92, thereby reducing defects and improvingdevice stability. For example, by reducing hydrogen diffusion with anembodiment dielectric material 98, the threshold voltage (V_(th)) curveof the TFTs 204 may shift in a positive bias direction, enhancingstability of the TFTs 204. A relatively low hydrogen concentration canbe achieved in the dielectric material 98 by, for example, reducing aflowrate of hydrogen-comprising precursor(s) used to deposit thedielectric material 98. For example, in embodiments where the dielectricmaterial 98 comprises silicon oxide, silicon nitride, or the like, thedielectric material 98 may be deposited by a process with a relativelylow SiH₄ precursor flowrate to suppress H° or H⁺ diffusion into thedielectric material 98 and the OS layer 92.

Pairs of the conductive lines 106 and 108 along with an intersectingconductive line 72 define boundaries of each memory cell 202, and adielectric material 102 is disposed between and isolates adjacent pairsof the conductive lines 106 and 108. In some embodiments, the conductivelines 108 are electrically coupled to ground. Although FIG. 1Aillustrates a particular placement of the conductive lines 106 relativethe conductive lines 108, it should be appreciated that the placement ofthe conductive lines 106 and 108 may be flipped in other embodiments.

As discussed above, the memory array 200 may also include an oxidesemiconductor (OS) layer 92. The OS layer 92 may provide channel regionsfor the TFTs 204 of the memory cells 202. For example, when anappropriate voltage (e.g., higher than a respective threshold voltage(V_(th)) of a corresponding TFT 204) is applied through a correspondingconductive line 72, a region of the OS layer 92 that intersects theconductive line 72 may allow current to flow from the conductive lines106 to the conductive lines 108 (e.g., in the direction indicated byarrow 206). The OS layer 92 may have a relatively low hydrogenconcentration, such as in a range of about 10²⁰ to about 10²² atoms percubic centimeter as measured by Time-of-Flight Secondary Ion MassSpectrometry (ToF-SIMS) analysis. As a result, stability of the TFTs 204may be improved compared to TFTs with OS layers having a higherconcentration of hydrogen.

A memory film 90 is disposed between the conductive lines 72 and the OSlayer 92, and the memory film 90 may provide gate dielectrics for theTFTs 204. In some embodiments, the memory film 90 comprises aferroelectric material, such as a hafnium oxide, hafnium zirconiumoxide, silicon-doped hafnium oxide, or the like. Accordingly, the memoryarray 200 may also be referred to as a ferroelectric random accessmemory (FERAM) array. Alternatively, the memory film 90 may be amultilayer structure comprising a layer of SiN_(x) between two SiO_(x)layers (e.g., an ONO structure), a different ferroelectric material, adifferent type of memory layer (e.g., capable of storing a bit), or thelike.

In embodiments where the memory film 90 comprises a ferroelectricmaterial, the memory film 90 may be polarized in one of two differentdirections, and the polarization direction may be changed by applying anappropriate voltage differential across the memory film 90 andgenerating an appropriate electric field. The polarization may berelatively localized (e.g., generally contained within each boundariesof the memory cells 202), and a continuous region of the memory film 90may extend across a plurality of memory cells 202. Depending on apolarization direction of a particular region of the memory film 90, athreshold voltage of a corresponding TFT 204 varies, and a digital value(e.g., 0 or 1) can be stored. For example, when a region of the memoryfilm 90 has a first electrical polarization direction, the correspondingTFT 204 may have a relatively low threshold voltage, and when the regionof the memory film 90 has a second electrical polarization direction,the corresponding TFT 204 may have a relatively high threshold voltage.The difference between the two threshold voltages may be referred to asthe threshold voltage shift. A larger threshold voltage shift makes iteasier (e.g., less error prone) to read the digital value stored in thecorresponding memory cell 202.

To perform a write operation on a memory cell 202 in such embodiments, awrite voltage is applied across a portion of the memory film 90corresponding to the memory cell 202. The write voltage can be applied,for example, by applying appropriate voltages to a correspondingconductive line 72 (e.g., the word line) and the correspondingconductive lines 106/108 (e.g., the bit line/source line). By applyingthe write voltage across the portion of the memory film 90, apolarization direction of the region of the memory film 90 can bechanged. As a result, the corresponding threshold voltage of thecorresponding TFT 204 can also be switched from a low threshold voltageto a high threshold voltage or vice versa, and a digital value can bestored in the memory cell 202. Because the conductive lines 72 intersectthe conductive lines 106 and 108, individual memory cells 202 may beselected for the write operation.

To perform a read operation on the memory cell 202 in such embodiments,a read voltage (a voltage between the low and high threshold voltages)is applied to the corresponding conductive line 72 (e.g., the worldline). Depending on the polarization direction of the correspondingregion of the memory film 90, the TFT 204 of the memory cell 202 may ormay not be turned on. As a result, the conductive line 106 may or maynot be discharged through the conductive line 108 (e.g., a source linethat is coupled to ground), and the digital value stored in the memorycell 202 can be determined. Because the conductive lines 72 intersectthe conductive lines 106 and 108, individual memory cells 202 may beselected for the read operation.

FIG. 1A further illustrates reference cross-sections of the memory array200 that are used in later figures. Cross-section B-B′ is along alongitudinal axis of conductive lines 72 and in a direction, forexample, parallel to the direction of current flow of the TFTs 204.Cross-section C-C′ is perpendicular to cross-section B-B′ and isparallel to a longitudinal axis of the conductive lines 72.Cross-section C-C′ extends through the conductive lines 106.Cross-section D-D′ is parallel to cross-section C-C′ and extends throughthe dielectric material 102. Subsequent figures refer to these referencecross-sections for clarity.

In FIG. 2 , a substrate 50 is provided. The substrate 50 may be asemiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. Thesubstrate 50 may be a wafer, such as a silicon wafer. Generally, an SOIsubstrate is a layer of a semiconductor material formed on an insulatorlayer. The insulator layer may be, for example, a buried oxide (BOX)layer, a silicon oxide layer, or the like. The insulator layer isprovided on a substrate, typically a silicon or glass substrate. Othersubstrates, such as a multi-layered or gradient substrate may also beused. In some embodiments, the semiconductor material of the substrate50 may include silicon; germanium; a compound semiconductor includingsilicon carbide, gallium arsenide, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductorincluding silicon-germanium, gallium arsenide phosphide, aluminum indiumarsenide, aluminum gallium arsenide, gallium indium arsenide, galliumindium phosphide, and/or gallium indium arsenide phosphide; orcombinations thereof.

FIG. 2 further illustrates circuits that may be formed over thesubstrate 50. The circuits include active devices (e.g., transistors) ata top surface of the substrate 50. The transistors may include gatedielectric layers 202 over top surfaces of the substrate 50 and gateelectrodes 204 over the gate dielectric layers 202. Source/drain regions206 are disposed in the substrate 50 on opposite sides of the gatedielectric layers 202 and the gate electrodes 204. Gate spacers 208 areformed along sidewalls of the gate dielectric layers 202 and separatethe source/drain regions 206 from the gate electrodes 204 by appropriatelateral distances. In some embodiments, the transistors may be planarfield effect transistors (FETs), fin field effect transistors (finFETs),nano-field effect transistors (nanoFETs), or the like.

A first ILD 210 surrounds and isolates the source/drain regions 206, thegate dielectric layers 202, and the gate electrodes 204 and a second ILD212 is over the first ILD 210. Source/drain contacts 214 extend throughthe second ILD 212 and the first ILD 210 and are electrically coupled tothe source/drain regions 206 and gate contacts 216 extend through thesecond ILD 212 and are electrically coupled to the gate electrodes 204.An interconnect structure 220, including one or more stacked dielectriclayers 224 and conductive features 222 formed in the one or moredielectric layers 224, is over the second ILD 212, the source/draincontacts 214, and the gate contacts 216. Although FIG. 2 illustrates twostacked dielectric layers 224, it should be appreciated that theinterconnect structure 200 may include any number of dielectric layers224 having conductive features 222 disposed therein. The interconnectstructure 220 may be electrically connected to the gate contacts 216 andthe source/drain contacts 214 to form functional circuits. In someembodiments, the functional circuits formed by the interconnectstructure 220 may comprise logic circuits, memory circuits, senseamplifiers, controllers, input/output circuits, image sensor circuits,the like, or combinations thereof. Although FIG. 2 discusses transistorsformed over the substrate 50, other active devices (e.g., diodes or thelike) and/or passive devices (e.g., capacitors, resistors, or the like)may also be formed as part of the functional circuits.

In FIGS. 3A and 3B, a multi-layer stack 58 is formed over the structureof FIG. 2 . The substrate 50, the transistors, the ILDs, and theinterconnect structure 120 may be omitted from subsequent drawings forthe purposes of simplicity and clarity. Although the multi-layer stack58 is illustrated as contacting the dielectric layers 224 of theinterconnect structure 220, any number of intermediate layers may bedisposed between the substrate 50 and the multi-layer stack 58. Forexample, one or more additional interconnect layers comprisingconductive features in insulting layers (e.g., low-k dielectric layers)may be disposed between the substrate 50 and the multi-layer stack 58.In some embodiments, the conductive features may be patterned to providepower, ground, and/or signal lines for the active devices on thesubstrate 50 and/or the memory array 200 (see FIGS. 1A and 1B).

The multi-layer stack 58 includes alternating layers of conductive lines72A-D (collectively referred to as conductive layers 54) and dielectriclayers 52A-C (collectively referred to as dielectric layers 52). Theconductive layers 54 may be patterned in subsequent steps to define theconductive lines 72 (e.g., word lines). The conductive layers 54 maycomprise a conductive material, such as, copper, titanium, titaniumnitride, tantalum, tantalum nitride, tungsten, ruthenium, aluminum,combinations thereof, or the like, and the dielectric layers 52 maycomprise an insulating material, such as silicon oxide, silicon nitride,silicon oxynitride, combinations thereof, or the like. The conductivelayers 54 and dielectric layers 52 may be each formed using, forexample, chemical vapor deposition (CVD), atomic layer deposition (ALD),physical vapor deposition (PVD), plasma enhanced CVD (PECVD), or thelike. Although FIGS. 3A and 3B illustrate a particular number ofconductive layers 54 and dielectric layers 52, other embodiments mayinclude a different number of conductive layers 54 and dielectric layers52.

FIGS. 4 through 12B are views of intermediate stages in themanufacturing a staircase structure of the memory array 200, inaccordance with some embodiments. FIGS. 4 through 11 and 12B areillustrated along reference cross-section B-B′ illustrated in FIG. 1 .FIG. 12A is illustrated in a three-dimensional view.

In FIG. 4 a photoresist 56 is formed over the multi-layer stack 58. Asdiscussed above, the multi-layer stack 58 may comprise alternatinglayers of the conductive layers 54 (labeled 54A, 54B, 54C, and 54D) andthe dielectric layers 52 (labeled 52A, 52B, and 52C). The photoresist 56can be formed by using a spin-on technique.

In FIG. 5 , the photoresist 56 is patterned to expose the multi-layerstack 58 in regions 60 while masking remaining portions of themulti-layer stack 58. For example, a topmost layer of the multi-layerstack 58 (e.g., conductive layer 54D) may be exposed in the regions 60.The photoresist 56 may be patterned using acceptable photolithographytechniques

In FIG. 6 , the exposed portions of the multi-layer stack 58 in theregions 60 are etched using the photoresist 56 as a mask. The etchingmay be any acceptable etch process, such as by wet or dry etching, areactive ion etch (RIE), neutral beam etch (NBE), the like, or acombination thereof. The etching may be anisotropic. The etching mayremove portions of the conductive layer 54D and dielectric layer 52C inthe regions 60 and define openings 61. Because the conductive layer 54Dand the dielectric layer 52C have different material compositions,etchants used to remove exposed portions of these layers may bedifferent. In some embodiments, the dielectric layer 52C acts as an etchstop layer while etching the conductive layer 54D, and the conductivelayer 54C acts as an etch stop layer while etching dielectric layer 52C.As a result, the portions of the conductive layer 54E and the conductivelayer 54D may be selectively removed without removing remaining layersof the multi-layer stack 58, and the openings 61 may be extended to adesired depth. Alternatively, a timed etch processes may be used to stopthe etching of the openings 61 after the openings 61 reach a desireddepth. In the resulting structure, the conductive layer 54C is exposedin the regions 60.

In FIG. 7 , the photoresist 56 is trimmed to expose additional portionsof the multi-layer stack 58. The photoresist can be trimmed usingacceptable photolithography techniques. As a result of the trimming, awidth of the photoresist 56 is reduced, and portions the multi-layerstack 58 in regions 60 and 62 may be exposed. For example, a top surfaceof the conductive layer 54C may be exposed in the regions 60, and a topsurface of the conductive layer 54D may be exposed in the regions 62.

In FIG. 8 , portions of the conductive layer 54D, the dielectric layer52C, the conductive layer 54C, and the dielectric layer 52B in theregions 60 and 62 are removed by acceptable etching processes using thephotoresist 56 as a mask. The etching may be any acceptable etchprocess, such as by wet or dry etching, a reactive ion etch (RIE),neutral beam etch (NBE), the like, or a combination thereof. The etchingmay be anisotropic. The etching may extend the openings 61 further intothe multi-layer stack 58. Because the conductive layers 54D/54C and thedielectric layers 52C/52B have different material compositions, etchantsused to remove exposed portions of these layers may be different. Insome embodiments, the dielectric layer 52C acts as an etch stop layerwhile etching the conductive layer 54D; the conductive layer 54C acts asan etch stop layer while etching dielectric layer 52C; the dielectriclayer 52B acts as an etch stop layer while etching the conductive layer54C; and the conductive layer 54B acts as an etch stop layer whileetching the dielectric layer 52B. As a result, portions of theconductive layers 54D/54C and the dielectric layer 52C/52B may beselectively removed without removing remaining layers of the multi-layerstack 58, and the openings 61 may be extended to a desired depth.Further, during the etching processes, unetched portions of theconductive layers 54 and dielectric layers 52 act as a mask forunderlying layers, and as a result a previous pattern of the conductivelayer 54D and dielectric layer 52C (see FIG. 7 ) may be transferred tothe underlying conductive layer 54C and dielectric layer 52B. In theresulting structure, the conductive layer 54B is exposed in the regions60, and the conductive layer 54C is exposed in the regions 62.

In FIG. 9 , the photoresist 56 is trimmed to expose additional portionsof the multi-layer stack 58. The photoresist can be trimmed usingacceptable photolithography techniques. As a result of the trimming, awidth of the photoresist 56 is reduced, and portions the multi-layerstack 58 in regions 60, 62, and 64 may be exposed. For example, a topsurface of the conductive layer 54B may be exposed in the regions 60; atop surface of the conductive layer 54C may be exposed in the regions62; and a top surface of the conductive layer 542D may be exposed in theregions 64.

In FIG. 10 , portions of the conductive layers 54D, 54C, and 54B in theregions 60, 62, and 64 are removed by acceptable etching processes usingthe photoresist 56 as a mask. The etching may be any acceptable etchprocess, such as by wet or dry etching, a reactive ion etch (RIE),neutral beam etch (NBE), the like, or a combination thereof. The etchingmay be anisotropic. The etching may extend the openings 61 further intothe multi-layer stack 58. In some embodiments, the dielectric layer 52Cacts as an etch stop layer while etching the conductive layer 54D; thedielectric layer 52B acts as an etch stop layer while etching theconductive layer 54C; and the dielectric layer 52A acts as an etch stoplayer etching the conductive layer 54B. As a result, portions of theconductive layers 54D, 54C, and 54B may be selectively removed withoutremoving remaining layers of the multi-layer stack 58, and the openings61 may be extended to a desired depth. Further, during the etchingprocesses, each of the dielectric layers 52 act as a mask for underlyinglayers, and as a result a previous pattern of the dielectric layers52C/52B (see FIG. 9 ) may be transferred to the underlying conductivelayers 54C/54B. In the resulting structure, the dielectric layer 52A isexposed in the regions 60; the dielectric layer 52B is exposed in theregions 62; and the dielectric layer 52C is exposed in the regions 64.

In FIG. 11 , the photoresist 56 may be removed, such as by an acceptableashing or wet strip process. Thus, a staircase structure 68 is formed.The staircase structure comprises a stack of alternating ones of theconductive layers 54 and the dielectric layers 52. Lower conductivelayers 54 are wider and extend laterally past upper conductive layers54, and a width of each of the conductive layers 54 increases in adirection towards the substrate 50. For example, the conductive layer54A may longer than the conductive layer 54B; the conductive layer 54Bmay be longer than the conductive layer 54C; and the conductive layer54C may be longer than the conductive layer 54D. As a result, conductivecontacts can be made from above the staircase structure 68 to each ofthe conductive layers 54 in subsequent processing steps.

In FIG. 12 , an inter-metal dielectric (IMD) 70 is deposited over themulti-layer stack 58. The IMD 70 may be formed of a dielectric material,and may be deposited by any suitable method, such as CVD,plasma-enhanced CVD (PECVD), or FCVD. Dielectric materials may includephospho-silicate glass (PSG), boro-silicate glass (BSG), boron-dopedphospho-silicate glass (BPSG), undoped silicate glass (USG), or thelike. Other insulation materials formed by any acceptable process may beused. The IMD 70 extends along sidewalls of the conductive layers 54 aswell as sidewalls of the dielectric layers 52. Further, the IMD 70 maycontact top surfaces of each of the dielectric layers 52.

As further illustrated in FIG. 12 , a removal process is then applied tothe IMD 70 to remove excess dielectric material over the multi-layerstack 58. In some embodiments, a planarization process such as achemical mechanical polish (CMP), an etch-back process, combinationsthereof, or the like may be utilized. The planarization process exposesthe multi-layer stack 58 such that top surfaces of the multi-layer stack58 and IMD 70 are level after the planarization process is complete.

FIGS. 13 through 17B are views of intermediate stages in themanufacturing of the memory array 200, in accordance with someembodiments. In FIGS. 13 through 17B the multi-layer stack 58 is formedand trenches are formed in the multi-layer stack 58, thereby definingthe conductive lines 72. The conductive lines 72 may correspond to wordlines in the memory array 200, and the conductive lines 72 may furtherprovide gate electrodes for the resulting TFTs of the memory array 200.FIG. 17A is illustrated in a three-dimensional view. FIGS. 13 through 16and 17B are illustrated along reference cross-section C-C′ illustratedin FIG. 1A.

In FIG. 13 , a hard mask 80 and a photoresist 82 are deposited over themulti-layer stack 58. The hard mask layer 80 may include, for example,silicon nitride, silicon oxynitride, or the like, which may be depositedby CVD, PVD, ALD, PECVD, or the like. The photoresist 82 can be formedby using a spin-on technique, for example.

In FIG. 14 , the photoresist 82 is patterned to form trenches 86. Thephotoresists can be patterned using acceptable photolithographytechniques. For example, the photoresist 82 be exposed to light forpatterning. After the exposure process, the photoresist 82 may bedeveloped to remove exposed or unexposed portions of the photo resistdepending on whether a negative or positive resist is used, therebydefining a patterning of the form trenches 86.

In FIG. 15 , a pattern of the photoresist 82 is transferred to the hardmask 84 using an acceptable etching process, such as by wet or dryetching, a reactive ion etch (RIE), neutral beam etch (NBE), the like,or a combination thereof. The etching may be anisotropic. Thus, trenches86 are formed extending through the hard mask 84. The photoresist 82 maybe removed by an ashing process, for example.

In FIG. 16 , a pattern of the hard mask 84 is transferred to themulti-layer stack 58 using one or more acceptable etching processes,such as by wet or dry etching, a reactive ion etch (RIE), neutral beametch (NBE), the like, or a combination thereof. The etching processesmay be anisotropic. Thus, trenches 86 extended through the multi-layerstack 58, and the conductive lines 72 (e.g., word lines) are formed fromthe conductive layers 54. By etching trenches 86 through the conductivelayers 54, adjacent conductive lines 72 can be separated from eachother. Subsequently, in FIGS. 17A and 17B, the hard mask 84 may then beremoved by an acceptable process, such as a wet etching process, a dryetching process, a planarization process, combinations thereof, or thelike. Due to the staircase shape of the multi-layered stack 58 (seee.g., FIG. 12 ), the conductive lines 72 may have varying lengths thatincrease in a direction towards the substrate 50. For example, theconductive lines 72A may be longer than the conductive lines 72B; theconductive lines 72B may be longer than the conductive lines 72C; andthe conductive lines 72C may be longer than the conductive lines 72D.

FIGS. 18A through 23C illustrate forming and patterning channel regionsfor the TFTs 204 (see FIG. 1A) in the trenches 86. FIGS. 18A, 18A, and23A are illustrated in a three-dimensional view. In FIGS. 18B, 19B, 20,21, 22A, 22B, and 23B cross-sectional views are provided along line C-C′of FIG. 1A. FIG. 23C illustrates a corresponding top-down view of theTFT structure.

In FIGS. 18A and 18B, a memory film 90 is conformally deposited in thetrenches 86. The memory film 90 may have a material that is capable ofstoring a bit, such as material capable of switching between twodifferent polarization directions by applying an appropriate voltagedifferential across the memory film 90. For example, the polarization ofthe memory film 90 may change due to an electric field resulting fromapplying the voltage differential.

For example, the memory film 90 may be a high-k dielectric material,such as a hafnium (Hf) based dielectric material, or the like. In someembodiments, the memory film 90 comprises a ferroelectric material, suchas, hafnium oxide, hafnium zirconium oxide, silicon-doped hafnium oxide,or the like. In other embodiments, the memory 90 may be a multilayerstructure comprising a layer of SiN_(x) between two SiO_(x) layers(e.g., an ONO structure). In still other embodiments, the memory film 90may comprise a different ferroelectric material or a different type ofmemory material. The memory film 90 may be deposited by CVD, PVD, ALD,PECVD, or the like to extend along sidewalls and a bottom surface of thetrenches 86. After the memory film 90 is deposited, an annealing step(e.g., at a temperature range of about 300° C. to about 600° C.) in maybe performed to achieve a desired crystalline phase, improve filmquality, and reduce film-related defects/impurities for the memory film90. In some embodiments, the annealing step may further be below 400° C.to meet a BEOL thermal budget and reduce defects that may result inother features from high-temperature annealing processes.

In FIGS. 19A and 19B, the OS layer 92 is conformally deposited in thetrenches 86 over the memory film 90. The OS layer 92 comprises amaterial suitable for providing a channel region for a TFT (e.g., TFTs204, see FIG. 1A). In some embodiments, the OS layer 92 comprises anindium-comprising material, such as In_(x)Ga_(y)Zn_(z)MO, where M may beTi, Al, Ag, Si, Sn, or the like. X, Y, and Z may each be any valuebetween 0 and 1. In other embodiments, a different semiconductormaterial may be used for the OS layer 92. The OS layer 92 may bedeposited by CVD, PVD, ALD, PECVD, or the like. The OS layer 92 mayextend along sidewalls and a bottom surface of the trenches 86 over theFE layer 90. After the OS layer 92 is deposited, an annealing step(e.g., at a temperature range of about 300° C. to about 450° C. or in arange of about 300° C. to about 400° C.) in oxygen-related ambient maybe performed to activate the charge carriers of the OS layer 92.

In FIG. 20 , a dielectric material 98A is deposited on sidewalls and abottom surface of the trenches 86 and over the OS layer 92. Thedielectric material 98A may comprise, for example, silicon oxide,silicon nitride, silicon oxynitride, or the like, which may be depositedby CVD, PVD, ALD, PECVD, or the like. In some embodiments, depositingthe dielectric material 98A may comprise reducing a flow of ahydrogen-comprising precursor so that the dielectric material 98A isformed with a relatively low hydrogen concentration. For example, inembodiments where the dielectric material 98A is a silicon-comprisinginsulating material (e.g., silicon oxide, silicon nitride, siliconoxynitride, or the like), a first hydrogen-comprising precursor (e.g.,silane (SiH₄), Tetraethyl Silicate (TEOS), or the like) and a secondhydrogen-free precursor may be simultaneously supplied during thedeposition process. Because the first hydrogen-comprising precursor isused. The second hydrogen-free precursor may be, for example, N₂O whenthe dielectric material 98A comprises silicon oxide, and the secondhydrogen-free precursor may be, for example, NH₃ when the dielectricmaterial 98A comprises silicon nitride. A flowrate of the firsthydrogen-comping precursor is used, hydrogen ions (e.g., H⁺) and/orhydrogen species (H°) may diffuse into OS layer 92 through thedielectric material 98A, causing instability in the resultingtransistor. Accordingly, various embodiments improve transistorstability by reducing a flowrate of the first hydrogen-comprisingprecursor. For example, a ratio of a flowrate of the secondhydrogen-free precursor to a flowrate of the first hydrogen-comprisingprecursor may be at least 60. It has been observed that maintaining aprecursor flowrate in the above ratio, hydrogen diffusion into the OSlayer 92 may be reduced to a desired level and device stability may beimproved.

In some embodiments, a hydrogen concentration of the OS layer 92 afterthe dielectric material 98A is deposited may be in a range of about 10²⁰atoms per cubic centimeter to about 10²² atoms per cubic centimeter asmeasured by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS).FIG. 32A illustrates a graph 300 of hydrogen concentrations (e.g., curve302) in the OS layer 92 and the dielectric material 98A according tosome embodiments. In graph 300, the x-axis indicates sputtering time,which corresponds to a detection time (e.g., distance) during theToF-SIMs analysis. By maintaining a hydrogen concentration of the OSlayer 92 in this range, a threshold voltage characteristic curve of theresulting transistor 204 may shift in a positive bias direction,enhancing stability of the transistor. For example, FIG. 32B illustratesa graph 304 depicting a threshold voltage characteristic curve 306 of afirst transistor and a threshold voltage characteristic curve 308 of asecond transistor. The first transistor (e.g., corresponding to curve306) has a channel region (e.g., OS layer) with a hydrogen concentrationover the above range, and the second transistor (e.g., corresponding tocurve 308) has a channel region with a hydrogen concentration in theabove range. Arrow 310 indicates the positive bias direction shift ofthe threshold voltage characteristic curve 308 compared to the thresholdvoltage characteristic curve 306.

As a result of embodiment deposition processes, a hydrogen concentrationin the dielectric material 98A may be relatively low. For example, ahydrogen concentration of the dielectric material 98A may be greaterthan 0 and less than 5 at % when the dielectric material 98A comprisessilicon oxide (e.g., SiO_(x)). As another example, an overall hydrogenconcentration of the dielectric material 98A may be greater than 0 andless than 10 at % when the dielectric material 98A comprises siliconnitride (e.g., SiN_(x)). An overall hydrogen concentration at aninterface 96 between the OS layer 92 and the dielectric material 98A maybe less than about 3 at %. Maintaining hydrogen concentrations of thedielectric material 98A within these ranges may achieve advantages, suchas reduced diffusion into the OS layer 92 and improved transistorstability.

In FIG. 21 , bottom portions of the dielectric material 98A in thetrenches 86 are removed using a combination of photolithography andetching, for example. The etching may be any acceptable etch process,such as by wet or dry etching, a reactive ion etch (RIE), neutral beametch (NBE), the like, or a combination thereof. The etching may beanisotropic.

Subsequently, as also illustrated by FIG. 21 , the dielectric material98A may be used as an etch mask to etch through a bottom portion of theOS layer 92 in the trenches 86. The etching may be any acceptable etchprocess, such as by wet or dry etching, a reactive ion etch (RIE),neutral beam etch (NBE), the like, or a combination thereof. The etchingmay be anisotropic. Etching the OS layer 92 may expose portions of thememory film 90 on a bottom surface of the trenches 86. Thus, portions ofthe OS layer 92 on opposing sidewalls of the trenches 86 may beseparated from each other, which improves isolation between the memorycells 202 of the memory array 200 (see FIG. 1A).

In FIGS. 22A and 22B, an additional dielectric material 98B ordielectric material 98C may be deposited to fill remaining portions ofthe trenches 86. In the embodiment of FIG. 22A, the dielectric material98B may have a same material composition and be formed using a likeprocess as the dielectric material 98A. For example, the dielectricmaterial 98B may be formed using a deposition process with a relativelylow flowrate for a hydrogen comprising precursor. In some embodimentsthe dielectric material 98B may be formed with a deposition processwhere a ratio of a flowrate of a hydrogen-free precursor (e.g., N₂O) toa flowrate of a hydrogen-comprising precursor (e.g., SiH₄) is at least60. In some embodiments, a respective ratio of the flowrate of thehydrogen-free precursor to the flowrate of the hydrogen-comprisingprecursor may be the same for depositing the dielectric material 98B asdepositing the dielectric material 98A. As a result, a hydrogenconcentration of the dielectric material 98B is relatively low. Forexample, an overall hydrogen concentration of the dielectric material98B may be greater than 0 and less than 5 at % when the dielectricmaterial 98B comprises silicon oxide (e.g., SiO_(x)). As anotherexample, an overall hydrogen concentration of the dielectric material98B may be greater than 0 and less than 10 at % when the dielectricmaterial 98B comprises silicon nitride (e.g., SiN_(x)).

FIG. 22B illustrates an alternate embodiment memory array 200′ where adielectric material 98C is deposited to fill remaining portions of thetrenches 86 instead of the dielectric material 98B. The dielectricmaterial 98C may have a different material composition and be formedusing a different process than the dielectric material 98A. Thedielectric material 98C may comprise, for example, silicon oxide,silicon nitride, silicon oxynitride, or the like, which may be depositedby CVD, PVD, ALD, PECVD, or the like. However, depositing the dielectricmaterial 98C may comprise increasing a flow of a hydrogen-comprisingprecursor compared to the dielectric material 98A. As a result, thedielectric material 98C is formed with a relatively high hydrogenconcentration. For example, in embodiments where the dielectric material98C is a silicon-comprising insulating material (e.g., silicon oxide,silicon nitride, silicon oxynitride, or the like), a thirdhydrogen-comprising precursor (e.g., SiH₄, TEOS, or the like) and afourth hydrogen-free precursor may be simultaneously flowed during thedeposition process. The fourth hydrogen-free precursor may be, forexample, N₂O when the dielectric material 98C comprises silicon oxide,and the fourth hydrogen-free precursor may be, for example, NH₃ when thedielectric material 98C comprises silicon nitride. For example, a ratioof a flowrate of the second hydrogen-free precursor to a flowrate of thefirst hydrogen-comprising precursor may greater 60, such as up to 70. Ithas been observed that maintaining a precursor flowrate in the aboveratio, a hydrogen concentration of the dielectric material 98C may begreater than a hydrogen concentration of the dielectric material 98A.For example, an overall hydrogen concentration of the dielectricmaterial 98C may be in a range of about 1×10²¹ atoms/cm³ to 1×10²²atoms/cm³ when the dielectric material 98C comprises silicon oxide(e.g., SiO_(x)). As another example, an overall hydrogen concentrationof the dielectric material 98C may be greater than 1×10²² atoms/cm³ whenthe dielectric material 98C comprises silicon nitride (e.g., SiN_(x)).Because the relatively low-hydrogen concentration dielectric material98A separates the relatively high-hydrogen concentration dielectricmaterial 98C and the OS layer 92, a high hydrogen concentration in thedielectric material 98C may not significantly degrade device performancein the resulting transistor, and the benefits described above may stillbe achieved.

Subsequent figures illustrate further processing based on the embodimentof FIG. 22A (e.g., where the dielectric material 98B and the dielectricmaterial 98A have a same material composition) for ease of illustration.The dielectric material 98B and the dielectric material 98A may bereferred to collectively as the dielectric material 98 herein after. Itshould be understood that similar processing may be applied to theembodiment of FIG. 22B (e.g., wherein the dielectric material 98C andthe dielectric material 98A have different material compositions). FIGS.33A through 33C illustrate the memory array 200′ according to theembodiment of FIG. 22B.

In FIGS. 23A through 23C, a removal process is then applied to thedielectric material 98, the OS layer 92, and the memory film 90 toremove excess material over the multi-layer stack 58. In someembodiments, a planarization process such as a chemical mechanicalpolish (CMP), an etch-back process, combinations thereof, or the likemay be utilized. The planarization process exposes the multi-layer stack58 such that top surface of the multi-layer stack 58 is level after theplanarization process is complete. FIG. 23C illustrates a correspondingtop-down view of the structure illustrated in FIG. 23A.

FIGS. 24A through 27C illustrate intermediate steps of manufacturingconductive lines 106 and 108 (e.g., source lines and bit lines) in thememory array 200. The conductive lines 106 and 108 may extend along adirection perpendicular to the conductive lines 72 such that individualcells of the memory array 200 may be selected for read and writeoperations. In FIGS. 24A through 27C, figures ending in “A” illustrate a3D view; figures ending in “B” illustrate a top down view, and figuresending in “C” illustrate a corresponding cross-sectional view parallelto line C-C′ of FIG. 1A.

In FIGS. 24A, 24B, and 24C, trenches 100 are patterned through the OSlayer 92 and the dielectric material 98 (including the dielectricmaterial 98A and the dielectric material 98B). FIG. 24C illustrates across-section view of line C-C′ in FIG. 24B. Patterning the trenches 100may be performed through a combination of photolithography and etching,for example. The trenches 100 may be disposed between opposing sidewallsof the memory film 90, and the trenches 100 may physically separateadjacent stacks of memory cells in the memory array 200 (see FIG. 1A).

In FIGS. 25A, 25B, and 25C, a dielectric material 102 is deposited inand fills the trenches 100. FIG. 25C illustrates a cross-sectional viewof line C-C′ in FIG. 25B. The dielectric layer 102 may include, forexample, silicon oxide, silicon nitride, silicon oxynitride, or thelike, which may be deposited by CVD, PVD, ALD, PECVD, or the like. Thedielectric layer 102 may extend along sidewalls and a bottom surface ofthe trenches 86 over the OS layer 92. After deposition, a planarizationprocess (e.g., a CMP, etch back, or the like) may be performed to removeexcess portions of the dielectric material 102. In the resultingstructure, top surfaces of the multi-layer stack 58, the memory film 90,the OS layer 92, and the dielectric material 102 may be substantiallylevel (e.g., within process variations). In some embodiments, materialsof the dielectric materials 98 and 102 may be selected so that they maybe etched selectively relative each other. For example, in someembodiments, the dielectric material 98 is an oxide and the dielectricmaterial 102 is a nitride. In some embodiments, the dielectric material98 is a nitride and the dielectric material 102 is an oxide. Othermaterials are also possible.

In FIGS. 26A, 26B, and 26C, trenches 104 are patterned for theconductive lines 106 and 108. FIG. 26C illustrates a cross-sectionalview of line C-C′ in FIG. 26B. The trenches 104 are patterned bypatterning the dielectric material 98 (including the dielectric material98A and the dielectric material 98C) using a combination ofphotolithography and etching, for example.

For example, a photoresist 120 may be deposited over the multi-layerstack 58, the dielectric material 98, the dielectric material 102, theOS layer 92, and the memory film 90. The photoresist 118 can be formedby using a spin-on technique, for example. The photoresist 120 ispatterned to define openings 122. Each of the openings 122 may overlap acorresponding region of the dielectric material 102, and each of theopenings 122 may further partially expose two separate regions of thedielectric material 98. For example, each opening 120 may expose aregion of the dielectric material 102; partially expose a first regionof the dielectric material 98; and partially expose a second region ofthe dielectric material 98 that is separated from the first region ofthe dielectric material 98 by the region of the dielectric material 102.In this way, each of the openings 122 may define a pattern of aconductive line 106 and an adjacent conductive line 108 that areseparated by the dielectric material 102. The photoresists can bepatterned using acceptable photolithography techniques. For example, thephotoresist 120 be exposed to light for patterning. After the exposureprocess, the photoresist 120 may be developed to remove exposed orunexposed portions of the photoresist depending on whether a negative orpositive resist is used, thereby defining a patterning of the formopenings 122.

Subsequently, portions of the dielectric material 98 exposed by theopenings 122 may be removed by etching, for example. The etching may beany acceptable etch process, such as by wet or dry etching, a reactiveion etch (RIE), neutral beam etch (NBE), the like, or a combinationthereof. The etching may be anisotropic. The etching process may use anetchant that etches the dielectric material 98 without significantlyetching the dielectric material 102. As a result, even though theopenings 122 expose the dielectric material 102, the dielectric material102 may not be significantly removed. A pattern of the trenches 104 maycorrespond to the conductive lines 106 and 108 (see FIGS. 27A, 27B, and27C). For example, a portion of the dielectric material 98 may remainbetween each pair of the trenches 104, and the dielectric material 102may be disposed between adjacent pairs of the trenches 104. After thetrenches 104 are patterned, the photoresist 120 may be removed byashing, for example.

In FIGS. 27A, 27B, and 27C the trenches 104 are filled with a conductivematerial to form the conductive lines 106 and 108. FIG. 27C illustratesa cross-sectional view of line C-C′ in FIG. 27B. The conductive lines106 and 108 may each comprise a conductive material, such as, copper,titanium, titanium nitride, tantalum, tantalum nitride, tungsten,ruthenium, aluminum, combinations thereof, or the like, which may beeach formed using, for example, CVD, ALD, PVD, PECVD, or the like. Afterthe conductive lines 106 and 108 are deposited, a planarization (e.g., aCMP, etch back, or the like) may be performed to remove excess portionsof the conductive material, thereby forming the conductive lines 106 and108. In the resulting structure, top surfaces of the multi-layer stack58, the memory film 90, the OS layer 92, the conductive lines 106, andthe conductive lines 108 may be substantially level (e.g., withinprocess variations). The conductive lines 106 may correspond to bitlines in the memory array, and the conductive lines 108 may correspondto source lines in the memory array 200. Although FIG. 27C illustrates across-sectional view that only shows the conductive lines 106, across-sectional view of the conductive lines 108 may be similar.

Thus stacked TFTs 204 may be formed in the memory array 200. Each TFT204 comprises a gate electrode (e.g., a portion of a correspondingconductive line 72), a gate dielectric (e.g., a portion of acorresponding memory film 90), a channel region (e.g., a portion of acorresponding OS layer 92), and source and drain electrodes (e.g.,portions of corresponding conductive lines 106 and 108). The dielectricmaterial 102 isolates adjacent TFTs 204 in a same column and at a samevertical level. The TFTs 204 may be disposed in an array of verticallystacked rows and columns.

In FIGS. 28A, 28B, 28C, and 28D, contacts 110 are made to the conductivelines 72, the conductive lines 106, and the conductive lines 108. FIG.28A illustrates a perspective view of the memory array 200; FIG. 28Billustrates a top-down view of the memory array 200; and FIG. 28Cillustrates a cross-sectional view of the device and underlyingsubstrate alone the line 30C′-30C′ of FIG. 28A; and FIG. 28D illustratesa cross-sectional view of the device along line B-B′ of FIG. 1A. In someembodiments, the staircase shape of the conductive lines 72 may providea surface on each of the conductive lines 72 for the conductive contacts110 to land on. Forming the contacts 110 may include patterning openingsin the IMD 70 and the dielectric layers 52 to expose portions of theconductive layers 54 using a combination of photolithography andetching, for example. A liner (not shown), such as a diffusion barrierlayer, an adhesion layer, or the like, and a conductive material areformed in the openings. The liner may include titanium, titaniumnitride, tantalum, tantalum nitride, or the like. The conductivematerial may be copper, a copper alloy, silver, gold, tungsten, cobalt,aluminum, nickel, or the like. A planarization process, such as a CMP,may be performed to remove excess material from a surface of the IMD 70.The remaining liner and conductive material form the contacts 110 in theopenings.

As also illustrated by the perspective view of FIG. 28A, conductivecontacts 112 and 114 may also be made to the conductive lines 106 andthe conductive lines 108, respectively. The conductive contacts 110,112, and 114 may be electrically connected to conductive lines 116A,116B, and 116C, respectively, which connect the memory array to anunderlying/overlying circuitry (e.g., control circuitry) and/or signal,power, and ground lines in the semiconductor die. For example,conductive vias 118 may extend through the IMD 70 to electricallyconnect conductive lines 116C to the underlying circuitry of theinterconnect structure 220 and the active devices on the substrate 50 asillustrated by FIG. 28C. Other conductive vias may be formed through theIMD 70 to electrically connect the conductive lines 116A and 116B to theunderlying circuitry of the interconnect structure 220. In alternateembodiments, routing and/or power lines to and from the memory array maybe provided by an interconnect structure formed over the memory array200 in addition to or in lieu of the interconnect structure 220.Accordingly, the memory array 200 may be completed.

Although the embodiments of FIGS. 2 through 28B illustrate a particularpattern for the conductive lines 106 and 108, other configurations arealso possible. For example, in these embodiments, the conductive lines106 and 108 have a staggered pattern. In some embodiments, theconductive lines 106 and 108 in a same row of the array are all alignedwith each other. FIG. 29 illustrates a top-down view, and FIG. 30illustrates a cross-sectional view alone line C-C′ of FIG. 28 . FIG. 31illustrates a cross-sectional view alone line D-D′ of FIG. 29 . In FIGS.29, 30, and 31 , like reference numerals indicate like elements formedby like processes as the elements of FIGS. 2 through 28B.

FIGS. 33A, 33B, 33C, and 33D illustrate memory array 200′ according toan alternate embodiment illustrated and described above with respect toFIG. 22B. FIG. 33A illustrates a perspective view of the memory array200; FIG. 33B illustrates a top-down view of the memory array 200; andFIG. 33C illustrates a cross-sectional view of the device and underlyingsubstrate alone the line 30C′-30C′ of FIG. 33A; and FIG. 33D illustratesa cross-sectional view of the device along line B-B′ of FIG. 1A. Thememory array 200′ may be similar to the memory array 200 where likereference numerals indicate like elements formed using like processes.However, the dielectric material 98B is replaced with a dielectricmaterial 98C, and the dielectric material 98C has a different materialcomposition than the dielectric material 98A. For example, as describedabove, a hydrogen concentration of the dielectric material 98C may behigher than the dielectric material 98A. This can be achieved, forexample, by increasing a flowrate of a hydrogen-comprising precursorwhile depositing the dielectric material 98C compared to depositing thedielectric material 98A.

Various embodiments provide a 3D memory array with vertically stackedmemory cells. The memory cells each comprise a TFT with a memory film,gate dielectric material and an oxide semiconductor channel region. TheTFT comprises source/drain electrodes, which are also source lines andbits lines in the memory array. A dielectric material is disposedbetween and isolates adjacent ones of the source/drain electrodes. Insome embodiments, at least a portion of the dielectric material is alow-hydrogen material formed using a hydrogen-comprising precursor thatis introduced at a reduced flowrate. For example, at least portions ofthe dielectric material (e.g., layer) in physical contact with channelregion of the TFT may have a relatively low hydrogen concentration, suchas, a less than 3 at %. The low hydrogen concentration (e.g., in theabove range) may reduce hydrogen diffusion into the channel region,thereby reducing defects and improving stability. A relatively lowhydrogen concentration can be achieved in the dielectric material by,for example, reducing a flowrate of a hydrogen-comprising precursor usedto deposit the dielectric material.

In some embodiments, a memory cell includes a thin film transistor overa semiconductor substrate. The thin film transistor includes a memoryfilm contacting a word line; and an oxide semiconductor (OS) layercontacting a source line and a bit line, wherein the memory film isdisposed between the OS layer and the word line; and a dielectricmaterial separating the source line and the bit line. The dielectricmaterial forms an interface with the OS layer. The dielectric materialcomprises hydrogen, and a hydrogen concentration at the interfacebetween the dielectric material and the OS layer is no more than 3atomic percent (at %). Optionally, in some embodiments, the dielectricmaterial comprises: a first dielectric material contacting the OS layer,the first dielectric material extending continuously from the sourceline to the bit line; and a second dielectric material on an opposingside of the first dielectric material as the OS layer, the seconddielectric material extending continuously from the source line to thebit line, a hydrogen concentration of the second dielectric materialbeing greater than a hydrogen concentration of the first dielectricmaterial. Optionally, in some embodiments, the dielectric materialcomprises silicon oxide, and an overall hydrogen concentration of thedielectric material is greater than 0 at % and less than 5 at %.Optionally, in some embodiments, the dielectric material comprisessilicon nitride, and an overall hydrogen concentration of the dielectricmaterial is greater than 0 at % and less than 10 at %. Optionally, insome embodiments, the OS layer comprises hydrogen. Optionally, in someembodiments, a hydrogen concentration of the OS layer is in a range of10²⁰ atoms per cubic centimeter to 10²² atoms per cubic centimeter.Optionally, in some embodiments, a longitudinal axis of the word lineextends parallel to a major surface of a semiconductor substrate, alongitudinal axis of the source line extends perpendicular to the majorsurface of the semiconductor substrate, and a longitudinal axis of thebit line extends perpendicular to the major surface of the semiconductorsubstrate.

In some embodiments, a device includes: a semiconductor substrate; afirst memory cell over the semiconductor substrate, the first memorycell comprising a first thin film transistor, wherein the first thinfilm transistor comprises: a gate electrode comprising a portion of afirst word line; a first portion of a ferroelectric material, the firstportion of the ferroelectric material being on a sidewall of the firstword line; and a first channel region on a sidewall of the ferroelectricmaterial, the first channel region comprising hydrogen, and a hydrogenconcentration of the first channel region being in a range of 10²⁰ atomsper cubic centimeter to 10²² atoms per cubic centimeter; a source line,wherein a first portion of the source line provides a first source/drainelectrode for the first thin film transistor; a bit line, wherein afirst portion of the bit line provides a second source/drain electrodefor the first thin film transistor; a first dielectric materialseparating the source line and the bit line, wherein the firstdielectric material physically contacts the first channel region; and asecond memory cell over the first memory cell. Optionally, in someembodiments, the second memory cell comprising a second thin filmtransistor, wherein a second portion of the source line provides a firstsource/drain electrode for the second thin film transistor, and whereina second portion of the bit line provides a second source/drainelectrode for the second thin film transistor. Optionally, in someembodiments, the device further includes a second word line under thefirst word line, wherein a gate electrode of the second thin filmtransistor comprises a portion of the second word line, and wherein thefirst word line is longer than the second word line. Optionally, in someembodiments, a hydrogen concentration at an interface between the firstdielectric material and the first channel region is less than 3 atomicpercent. Optionally, in some embodiments, the device further includes asecond dielectric material separating the source line and the bit line,the second dielectric material being separated from the first channelregion by the first dielectric material, and the first dielectricmaterial has a different material composition than the second dielectricmaterial. Optionally, in some embodiments, a hydrogen concentration ofthe second dielectric material is greater than a hydrogen concentrationof the first dielectric material.

In some embodiments, a method includes patterning a first trenchextending through a first conductive line; depositing a memory filmalong sidewalls and a bottom surface of the first trench; depositing anoxide semiconductor (OS) layer over the memory film, the OS layerextending along the sidewalls and the bottom surface of the firsttrench; depositing a first dielectric material over and contacting theOS layer, wherein depositing the first dielectric material comprisessimultaneously supplying a first hydrogen-comprising precursor at afirst flowrate and a second hydrogen-free precursor at a secondflowrate, and wherein a ratio of the second flowrate of the secondhydrogen-free precursor to the first flowrate of the firsthydrogen-comprising precursor is at least 60; and depositing a seconddielectric material over the first dielectric material to fill aremaining portion of the first trench. Optionally, in some embodiments,depositing the second dielectric material comprises simultaneouslysupplying a third hydrogen-comprising precursor at a third flowrate anda fourth hydrogen-free precursor at a fourth flowrate, and wherein aratio of the fourth flowrate of the fourth hydrogen-free precursor tothe third flowrate of the third hydrogen-comprising precursor is thesame as a ratio of the second flowrate of the second hydrogen-freeprecursor to the first flowrate of the first hydrogen-comprisingprecursor. Optionally, in some embodiments depositing the seconddielectric material comprises simultaneously supplying a thirdhydrogen-comprising precursor at a third flowrate and a fourthhydrogen-free precursor at a fourth flowrate, and wherein the thirdflowrate of the third hydrogen-comprising precursor is greater than thefirst flowrate of the first hydrogen-comprising precursor. Optionally,in some embodiments, the method further includes patterning a thirdtrench in the first dielectric material and the second dielectricmaterial; patterning a fourth trench in the first dielectric materialand the second dielectric material; and filling the third trench and thefourth trench with a conductive material to define a source line and abit line. Optionally, in some embodiments, the first hydrogen-comprisingprecursor is silane (SiH₄), and the second hydrogen-free precursor isN₂O. Optionally, in some embodiments, after depositing the firstdielectric material, a hydrogen concentration at an interface betweenthe first dielectric material and the OS layer is 3 at % or less.Optionally, in some embodiments, depositing the first dielectricmaterial comprises diffusing hydrogen into the OS layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A memory cell, comprising: a thin film transistorover a semiconductor substrate, the thin film transistor comprising: amemory film contacting a word line; and an oxide semiconductor (OS)layer contacting a source line and a bit line, wherein the memory filmis disposed between the OS layer and the word line; and a dielectricmaterial separating the source line and the bit line, wherein thedielectric material forms an interface with the OS layer, wherein thedielectric material comprises hydrogen, and wherein a hydrogenconcentration at the interface between the dielectric material and theOS layer is no more than 3 atomic percent (at %).
 2. The memory cell ofclaim 1, wherein the dielectric material comprises: a first dielectricmaterial contacting the OS layer, the first dielectric materialextending continuously from the source line to the bit line; and asecond dielectric material on an opposing side of the first dielectricmaterial as the OS layer, the second dielectric material extendingcontinuously from the source line to the bit line, a hydrogenconcentration of the second dielectric material being greater than ahydrogen concentration of the first dielectric material.
 3. The memorycell of claim 1, wherein the dielectric material comprises siliconoxide, and an overall hydrogen concentration of the dielectric materialis greater than o at % and less than 5 at %.
 4. The memory cell of claim1, wherein the dielectric material comprises silicon nitride, and anoverall hydrogen concentration of the dielectric material is greaterthan o at % and less than 10 at %.
 5. The memory cell of claim 1,wherein the OS layer comprises hydrogen.
 6. The memory cell of claim 1,wherein a hydrogen concentration of the OS layer is in a range of 10²⁰atoms per cubic centimeter to 10²² atoms per cubic centimeter.
 7. Thememory cell of claim 1, a longitudinal axis of the word line extendsparallel to a major surface of the semiconductor substrate, alongitudinal axis of the source line extends perpendicular to the majorsurface of the semiconductor substrate, and a longitudinal axis of thebit line extends perpendicular to the major surface of the semiconductorsubstrate.
 8. A device, comprising: a semiconductor substrate; a firstmemory cell over the semiconductor substrate, the first memory cellcomprising a first thin film transistor, wherein the first thin filmtransistor comprises: a gate electrode comprising a portion of a firstword line; a first portion of a ferroelectric material, the firstportion of the ferroelectric material being on a sidewall of the firstword line; and a first channel region on a sidewall of the ferroelectricmaterial, the first channel region comprising hydrogen, and a hydrogenconcentration of the first channel region being in a range of 10²⁰ atomsper cubic centimeter to 10²² atoms per cubic centimeter; a source line,wherein a first portion of the source line provides a first source/drainelectrode for the first thin film transistor; a bit line, wherein afirst portion of the bit line provides a second source/drain electrodefor the first thin film transistor; a first dielectric materialseparating the source line and the bit line, wherein the firstdielectric material physically contacts the first channel region; and asecond memory cell over the first memory cell.
 9. The device of claim 8,wherein the second memory cell comprising a second thin film transistor,wherein a second portion of the source line provides a firstsource/drain electrode for the second thin film transistor, and whereina second portion of the bit line provides a second source/drainelectrode for the second thin film transistor.
 10. The device of claim9, further comprising a second word line over the first word line,wherein a gate electrode of the second thin film transistor comprises aportion of the second word line, and wherein the first word line islonger than the second word line.
 11. The device of claim 8, wherein ahydrogen concentration at an interface between the first dielectricmaterial and the first channel region is less than₃ atomic percent. 12.The device of claim 8, further comprising a second dielectric materialseparating the source line and the bit line, the second dielectricmaterial being separated from the first channel region by the firstdielectric material, and the first dielectric material has a materialcomposition different than a material composition of the seconddielectric material.
 13. The device of claim 12, wherein a hydrogenconcentration of the second dielectric material is greater than ahydrogen concentration of the first dielectric material.
 14. A memorydevice, comprising: a thin film transistor over a semiconductorsubstrate, the thin film transistor comprising: a ferroelectric materialcontacting a word line; and an oxide semiconductor (OS) layer, whereinthe ferroelectric material is disposed between the OS layer and the wordline; a source line and a bit line each extending along a direction thatis perpendicular to a direction in which the word line extends and isfurther perpendicular to a major surface of the semiconductor substrate;a first dielectric material between the source line and the bit line,wherein the first dielectric material touches the OS layer; and a seconddielectric material between the source line and the bit line, whereinthe second dielectric material is separated from the OS layer by thefirst dielectric material, and wherein the first dielectric material hasa hydrogen concentration lower than a hydrogen concentration of thesecond dielectric material.
 15. The memory device of claim 14, wherein ahydrogen concentration at an interface between the first dielectricmaterial and the OS layer is no more than₃ atomic percent (at %). 16.The memory device of claim 14, wherein the first dielectric materialcomprises silicon oxide, and wherein the hydrogen concentration of thefirst dielectric material is greater than 0 at % and less than 5 at %.17. The memory device of claim 14, wherein the second dielectricmaterial comprises silicon oxide, and wherein the hydrogen concentrationof the second dielectric material is in a range of 1×10²¹ atoms/cm³ to1×10²² atoms/cm³.
 18. The memory device of claim 14, wherein the seconddielectric material comprises silicon nitride, and wherein the hydrogenconcentration of the second dielectric material is greater than 1×10²²atoms/cm³.
 19. The memory device of claim 14, further comprising a thirddielectric material touching the bit line, the OS layer, and theferroelectric material.
 20. The memory device of claim 14, wherein theOS layer comprises hydrogen.